TRANSMISSION STUDY OF PICOSECOND PHOTOCARRIER DYNAMICS IN FREESTANDING POROUS SILICON

Authors
MALY P TROJANEK F HOSPODKOVA A KOHLOVA V PELANT I
Citation
P. Maly et al., TRANSMISSION STUDY OF PICOSECOND PHOTOCARRIER DYNAMICS IN FREESTANDING POROUS SILICON, Solid state communications, 89(8), 1994, pp. 709-712
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
89
Issue
8
Year of publication
1994
Pages
709 - 712
Database
ISI
SICI code
0038-1098(1994)89:8<709:TSOPPD>2.0.ZU;2-P
Abstract
Pump and probe technique has been used to study time-resolved differen tial absorbance of free-standing porous silicon at room temperature. T he second (532 nm) harmonics of a mode-locked Nd3+:YAG picosecond lase r served as pump pulses and the fundamental frequency (1.06 mum) were used as probe pulses. Photocarrier dynamics shows a fast decay in time domain of hundred picoseconds. A model of bimolecular radiative recom bination is suggested, the values of bimolecular radiative recombinati on coefficient B and excited carrier cross section sigma have been fou nd to be B = 4 x 10(-10) cm3 s-1 and sigma = 9 x 10(-18) cm2, very clo se to the values reported for direct gap semiconductors.