E. Strasser et al., ACCURATE SIMULATION OF PATTERN TRANSFER PROCESSES USING MINKOWSKI OPERATIONS, IEICE transactions on electronics, E77C(2), 1994, pp. 92-97
A new method for simulation of etching and deposition processes has be
en developed. This method is based on fundamental morphological operat
ions derived from image and signal processing. As the material surface
during simulation moves in time, the geometry either increases or dec
reases. If the simulation geometry is considered as a two-valued image
(material or vacuum), etching and deposition processes can be simulat
ed by means of the erosion and dilation operation. Together with a cel
lular material representation this method allows an accurate and stabl
e simulation of three-dimensional arbitrary structures. Simulation res
ults for several etching and deposition problems demonstrate accuracy
and generality of our method.