ELECTROTHERMAL ANALYSIS OF LATCH-UP IN AN INSULATED GATE TRANSISTOR (IGT)

An advanced model for self-heating effects in power semiconductor devi ces is derived from principles of irreversible thermodynamics. The imp ortance of the entropy balance equation is emphasized. The governing e quations for the coupled transport of charge carriers and heat are val id in both the stationary and transient regimes. Four characteristic e ffects contributing to the heat generation can be identified: Joule he ating, recombination heating, Thomson heating and carrier source heati ng. Bandgap narrowing effects are included. Hot carrier effects are ne glected. Numerical methods to solve the governing equations for the co upled transport of charge carriers and heat are described. Finally, re sults obtained in simulating latch-up in an IGT are discussed.