INFLUENCE OF ENERGY-TRANSPORT RELATED EFFECTS ON NPN BJT DEVICE PERFORMANCE AND ECL GATE DELAY ANALYZED BY 2D PARALLEL MIXED LEVEL DEVICE CIRCUIT SIMULATION

The consequences of energy transport related effects like velocity ove rshoot on the performance of bipolar transistors have already been stu died previously. So far however most of the applied models were only 1 D and it remained unclear whether such effects would have a significan t influence on important quantities like ECL gate delay accessible onl y on the circuit level. To the authors' best knowledge in this paper f or the first time the consequences of energy transport related effects on the circuit level are investigated in a rigorous manner by mixed l evel device/circuit simulation incorporating full 2D numerical hydrody namic models on the device level.