DISLOCATION SCATTERING EFFECTS ON ELECTRON-MOBILITY IN INASSB

Heteroepitaxial InAsSb is routinely prepared on InAs, InSb, or GaAs su bstrates under conditions favorable to dislocation formation, since th e binary components are lattice mismatched by about 7.4%, and the tern ary are mismatched to GaAs by between 7.2% and 14.5%, depending on com position. We here extend the description of electron scattering in InA sSb to include the effects of grain boundaries and dislocations. Compa rison with experiment confirms that dislocation scattering has a stron g effect on transport, while alloy scattering limits mobility in terna ry samples grown with a minimum of defects.