ENHANCED COLLIMATION IN NARROW CHANNELS FABRICATED BY FOCUSED-ION-BEAM IMPLANTATION

Citation
T. Bever et al., ENHANCED COLLIMATION IN NARROW CHANNELS FABRICATED BY FOCUSED-ION-BEAM IMPLANTATION, Journal of applied physics, 75(5), 1994, pp. 2477-2480
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
75
Issue
5
Year of publication
1994
Pages
2477 - 2480
Database
ISI
SICI code
0021-8979(1994)75:5<2477:ECINCF>2.0.ZU;2-8
Abstract
We investigate the collimation factor of narrow channels defined by fo cused-ion-beam insulation writing in the highly mobile two-dimensional electron gas of an AlGaAs/GaAs heterostructure. We show that the degr ee of collimation can be enhanced by appropriate channel design. Addit ional boundary roughness caused by selective implantation of ions alon g the channel boundary considerably increases the collimation.