SOME ANALYSES OF POTENTIAL PROFILES OF FORWARD-BIASED HIGH-LOW JUNCTIONS

Authors
DE SS GHOSH AK
Citation
Ss. De et Ak. Ghosh, SOME ANALYSES OF POTENTIAL PROFILES OF FORWARD-BIASED HIGH-LOW JUNCTIONS, Journal of applied physics, 75(5), 1994, pp. 2496-2501
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
75
Issue
5
Year of publication
1994
Pages
2496 - 2501
Database
ISI
SICI code
0021-8979(1994)75:5<2496:SAOPPO>2.0.ZU;2-H
Abstract
A model calculation for the variation of the normalized potential agai nst the normalized position for a forward-biased, below 2 thermal volt age, high-low junction has been made through numerical computations of Poisson's equation. The model is oriented to a junction with a suffic iently large doping difference between the two sides.