DRIFT AND DIFFUSION IN LOW-DIMENSIONAL P-N-JUNCTIONS

We present a theoretical drift-and-diffusion study of the current-volt age characteristics of low-dimensional p-n junctions. Under low-level injection, low-dimensional p-n junctions exhibit current-voltage chara cteristics similar to those of three-dimensional diodes. Under high-le vel injection, the dependence of minority-carrier diffusion coefficien ts on the low-dimensional density of states may lead to the appearance of features in the small-signal properties. Such features become more pronounced as the temperature is lowered.