LONG-WAVELENGTH (LAMBDA-SIMILAR-TO 1.5-MU-M) NATIVE-OXIDE-DEFINED INALAS-INP-INGAASP QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES

Native oxidation (''wet'' oxidation via H2O vapor + N2) of InAlAs is e mployed to fabricate long wavelength (lambda is similar to 1.5 mum) In AlAs-InP-InGaAsP quantum well heterostructure laser diodes. Data are p resented on gain-guided native-oxide-defined stripe-geometry lasers (4 0 mum X 500 mum) with threshold currents of 200 mA (1 kA/cm2) emitting with multiple longitudinal modes centered at lambda is similar to 1.5 mum. The threshold currents, approximated as I(th)=I0 exp(T/T0), exhi bit a characteristic temperature of T0 is similar to 49 K and an opera ting temperature as high as T=70-degrees-C. Maximum continuous output powers of 140 mW/facet (uncoated facets) and a differential quantum ef ficiency of 38% are achieved.