POSSIBILITY OF DC DRIFT REDUCTION OF TI-LINBO3 MODULATORS VIA DRY O2 ANNEALING PROCESS

The possibility of the dc drift reduction of Ti:LiNbO3 optical modulat ors via the dry O2 annealing process of the wafer is investigated. In such modulators, the hydrogen impurities are reduced compared against those in the wet O2 annealed ones which exhibit large dc drifts. The d c drifts are observed to be less than 3 V for the dc bias application of 5 V at 80-degrees-C through 60 h, but the dc drift in the second me asurement of the same modulator is found to 5 V After the bias applica tion, the migration of H+ ions are observed in the Ti:LiNbO3.