IMPROVEMENTS IN STRAIN-BALANCED INGAAS GAAS OPTICAL MODULATORS FOR 1047-NM OPERATION/

We demonstrate a self-electro-optic effect device (SEED) designed to w ork at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain-balanced InGaAs/GaAs multiple quantum well gr own on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ra tio of 1.74 by applying 13-V reverse bias, and have found 99% photodet ection quantum efficiency under the built-in junction field. Bistabili ty in a resistor-SEED configuration is demonstrated.