PICOSECOND RAMAN STUDIES OF ELECTRIC-FIELD-INDUCED NONEQUILIBRIUM CARRIER DISTRIBUTIONS IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS

Authors
GRANN ED SHEIH SJ CHIA C TSEN KT SANKEY OF GUNCER SE FERRY DK MARACAS G DROOPAD R SALVADOR A BOTCHAREV A MORKOC H
Citation
Ed. Grann et al., PICOSECOND RAMAN STUDIES OF ELECTRIC-FIELD-INDUCED NONEQUILIBRIUM CARRIER DISTRIBUTIONS IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS, Applied physics letters, 64(10), 1994, pp. 1230-1232
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
10
Year of publication
1994
Pages
1230 - 1232
Database
ISI
SICI code
0003-6951(1994)64:10<1230:PRSOEN>2.0.ZU;2-6
Abstract
Electron transport in GaAs-based p-i-n nanostructure semiconductors un der the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T congruent-to 8 0 K. For an injected carrier density of n congruent-to 2.2 x 10(18) cm -3 and electric field intensity E = 25 kV/cm, the drift velocity of el ectrons as high as V(d) = 2.5 x 10(7) cm/s was observed. These experim ental results are in good agreement with Ensemble Monte Carlo calculat ions.