HIGH-FIELD STRESSING OF LPCVD GATE OXIDES

We have investigated gate oxide degradation as a function of high-fiel d constant current stress for two types of oxides, viz. standard dry a nd LPCVD oxides. Charge injection was done from both electrodes, the g ate and the substrate. Our results indicate that compared to dry oxide s, LPCVD oxides show reduced charge trapping and interface state gener ation for inversion stress. The degradation in LPCVD oxides with const ant current stress has been explained by the hydrogen model.