REDUCTION OF THE REVERSE SHORT-CHANNEL EFFECT IN THICK SOI MOSFETS

We show that the reverse short channel effect (RSCE) is reduced in NMO S devices made in thick silicon-on-insulator (SOI) material. The reduc tion of the RSCE depends on the thickness of the Si overlayer. It is f ound that the thinner the Si film, the less the threshold voltage roll -on. The experimental findings are explained by a decrease of the late ral distribution of silicon interstitials generated at the source and drain (S/D) region and are related with their high recombination veloc ity at the buried oxide. This method can be used to separately test th e influence of S/D point defects on the RSCE from other different hypo theses reported in the literature. Coupled process-device simulation r eveals that the method is very sensitive to fundamental point defect p roperties.