OXYGEN INCORPORATION DURING IN-SITU GROWTH OF YBCO FILMS ON BOTH SIDES OF SUBSTRATES

Oxygen out-diffusion during cooling and heating of in situ grown YBa2C u3O7-delta (YBCO) films in low oxygen pressure used during growth by p ulsed laser deposition was studied in the temperature range 700-450-de grees-C using in situ resistance measurements. Results indicate that i rrespective of the number of cooling and heating cycles seen by the fi lms full oxygenation of the films can be realized by the final cooling from the growth temperature in 500 torr oxygen pressure. This result has been successfully used to sequentially grow high quality YBCO film s on both sides of LaAlO3 substrates. These films have been used for t he fabrication of X-band microstrip resonators with superconducting gr ound plane.