ELECTRICAL-RESISTIVITY OF CARBON-BLACK LOADED POLYETHYLENE MODIFIED BY ION-IMPLANTATION

Citation
V. Svorcik et al., ELECTRICAL-RESISTIVITY OF CARBON-BLACK LOADED POLYETHYLENE MODIFIED BY ION-IMPLANTATION, Journal of materials research, 9(3), 1994, pp. 643-647
Citations number
19
Categorie Soggetti
Material Science
ISSN journal
08842914
Volume
9
Issue
3
Year of publication
1994
Pages
643 - 647
Database
ISI
SICI code
0884-2914(1994)9:3<643:EOCLPM>2.0.ZU;2-V
Abstract
Different properties of the mixtures of polyethylene with carbon black modified by the implantation of Sb+ ions were studied. Chemical chang es of polymer were examined by IR- and UV-visible spectroscopy. Sheet resistivity as a function of sample temperature was studied. Depth pro files of implanted Sb atoms and incorporated oxygen were determined by the Rutherford backscattering technique. The percolation threshold of unimplanted mixtures is found at 4.5 and 5 wt. % of carbon black. As a result of ion implantation, the polymer is oxidized and conjugated d ouble bonds are produced. The mixtures with carbon black concentration above percolation threshold exhibit metal-like conductivity. For the mixtures below percolation threshold, the measurements of resistivity versus temperature dependence indicate semiconductor type conductivity and charge transport via a variable range-hopping mechanism.