USING RAMAN MICROSCOPY TO DETECT LEAKS IN MICROMECHANICAL SILICON STRUCTURES

Citation
Wh. Weber et al., USING RAMAN MICROSCOPY TO DETECT LEAKS IN MICROMECHANICAL SILICON STRUCTURES, Applied spectroscopy, 51(1), 1997, pp. 123-129
Citations number
9
Categorie Soggetti
Instument & Instrumentation",Spectroscopy
Journal title
ISSN journal
00037028
Volume
51
Issue
1
Year of publication
1997
Pages
123 - 129
Database
ISI
SICI code
0003-7028(1997)51:1<123:URMTDL>2.0.ZU;2-A
Abstract
We demonstrate the use of Raman microscopy for leak detection in herme tically sealed micromachined accelerometers. Leaks were indicated by t he presence of a foreign gas, in this case oxygen, in the 70-mu m-deep cavity enclosing the accelerometer between a silicon cap and a Pyrex( R) window. Confocal, nondiffraction-limited operation of the Raman mic roscope utilized the available pathlength in the sample while still re jecting most of the fluorescence from the Pyrex(R), Raman peak intensi ties were accurately determined in the presence of noise by fitting th e spectra to a function that modeled the unresolved Q-branch line shap es of oxygen and nitrogen.