EFFECTS OF UNIAXIAL-STRESS ON THE METASTABLE LEVEL IN CR4+Y2SIO5

Authors
HOMMERICH U EILERS H YEN WM JIA W WANG Y
Citation
U. Hommerich et al., EFFECTS OF UNIAXIAL-STRESS ON THE METASTABLE LEVEL IN CR4+Y2SIO5, Optics communications, 106(4-6), 1994, pp. 218-222
Citations number
11
Categorie Soggetti
Optics
Journal title
Optics communications → ACNP
ISSN journal
00304018
Volume
106
Issue
4-6
Year of publication
1994
Pages
218 - 222
Database
ISI
SICI code
0030-4018(1994)106:4-6<218:EOUOTM>2.0.ZU;2-9
Abstract
When applying uniaxial stress on Cr4+:Y2SiO5 a pseudo-splitting of the electronic origin at 8709 cm-1 is observed. Further more, the electro nic origin and the broad emission band were very sensitive to stress. In contrast, the splitting of the excited state doublet remained nearl y unchanged under stress.