A 40 GHZ F(MAX) SI BIPOLAR TECHNOLOGY

A Si bipolar transistor with maximum frequency of oscillation (f(max)) of 40 GHz has been developed. The high f(max) transistor is fabricate d by employing a process which makes it possible to independently opti mize the base resistance (r(b)) and the cut-off frequency (f(T)) using an A-BSA (Advanced BSG (Boro-Silicate Glass) Self-Aligned) transistor . The high f(max) transistors realize a 1/16 dynamic frequency divider operated up to 35 GHz and an ECL circuit whose delay time is 23 ps/ga te. These circuit performances depend on f(max) instead of f(T), stron gly.