Bs. Sywe et al., EPITAXIAL-GROWTH OF SIC ON SAPPHIRE SUBSTRATES WITH AN ALN BUFFER LAYER, Journal of the Electrochemical Society, 141(2), 1994, pp. 510-513
SiC is a rapidly developing semiconductor suitable for high temperatur
e, high frequency, and high power electronics. In this work, AlN coate
d sapphire (0001) has been developed as a new substrate for SiC thin f
ilm epitaxy. By predepositing a thin AlN buffer layer, the nucleation
and adherence of the SiC film are vastly improved X-ray diffraction an
d electron channeling patterns have confirmed that single-crystal 6H-S
iC was obtained on AlN/Al2O3 substrates. The undoped SiC film showed n
-type electrical conductivity. The strain in the epilayer is small and
the dislocation density is comparable to that in SiC grown on Si(111)
.