EFFECT OF NEGATIVE AIR CORONA-STRESS ON METAL-OXIDE-SEMICONDUCTOR CAPACITORS

Effect of negative air corona-stress at slightly reduced pressure (con gruent-to 0.1 Torr) has been investigated on metal-chlorinated oxide-s emiconductor capacitors for different values of the high tension volta ge. Interface traps along with oxide charges were found to be generate d as a result of corona-stress. Room temperature annealing of the trap s with time was found to occur only when the devices were highly damag ed (i.e., the number of interface traps as well as oxide charges gener ated just after corona-stress was high). Water related traps were also found to be involved in the room-temperature annealing of the traps. The results have been analyzed on the basis of the different models pr oposed by different authors for the unmetallized surfaces and a plausi ble explanation has been presented.