THE USE OF RAMAN-SCATTERING TO STUDY DISORDER IN PULSED-LASER DEPOSITED MOS2 FILMS

Citation
Nt. Mcdevitt et al., THE USE OF RAMAN-SCATTERING TO STUDY DISORDER IN PULSED-LASER DEPOSITED MOS2 FILMS, Thin solid films, 240(1-2), 1994, pp. 76-81
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
240
Issue
1-2
Year of publication
1994
Pages
76 - 81
Database
ISI
SICI code
0040-6090(1994)240:1-2<76:TUORTS>2.0.ZU;2-P
Abstract
Raman scattering is utililized to investigate structural - disorder in solid lubricant films. MoS2 films used in tribological studies for ae rospace applications may be prepared by pulsed laser deposition (PLD) or by ion sputter deposition. Raman scattering spectra were obtained o n a set of standard MoS, compounds and a set of PLD films. These depos ition processes incorporate changes into the crystallinity of the depo sited films and the Raman data from these films were studied with a cu rve fitting program to analyze-the defects generated by the PLD proces s. The curve fitting program shows that MoS2 PLD films can be categori zed by peak position, half-band width, integrated area and linear inte nsity measurements. The Raman data appear to be more sensitive to crys tal order in the x-y symmetry plane than to order in the z axis of the crystal.