MG DOPING OF GAINP GROWN BY CHEMICAL BEAM EPITAXY USING BIS-CYCLOPENTADIENYL MAGNESIUM

We have investigated the p-type doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium (Cp2Mg). Hole concentrat ions up to the 10(18) cm-3 level have been achieved for substrate temp erature as high as 550-degrees-C and Mg incorporation was found to gro w linearly with the Cp2Mg flow rate in this range. The doping concentr ation decreases as the substrate temperature increases with an activat ion energy of 2.15 eV (50 kcal/mol). Two other parameters are the V/II I ratio and the growth rate which both enhance the Mg doping when incr eased.