STUDY OF THERMAL-OXIDATION AND NITROGEN ANNEALING OF LUMINESCENT POROUS SILICON

Authors
YAN J SHIH S JUNG KH KWONG DL KOVAR M WHITE JM GNADE BE MAGEL L
Citation
J. Yan et al., STUDY OF THERMAL-OXIDATION AND NITROGEN ANNEALING OF LUMINESCENT POROUS SILICON, Applied physics letters, 64(11), 1994, pp. 1374-1376
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
11
Year of publication
1994
Pages
1374 - 1376
Database
ISI
SICI code
0003-6951(1994)64:11<1374:SOTANA>2.0.ZU;2-Q
Abstract
The properties of thermally oxidized porous Si were studied by Fourier -transform infrared spectroscopy and secondary ion mass spectroscopy. The results show that residual hydrogen exists in the 1000-degrees-C/1 0 min thermally oxidized porous Si film in the form of SiOH bonds. The removal of these hydrogen atoms by annealing at 1000-degrees-C in N2 reduces the photoluminescence.