Bh. Moeckly et al., MICRO-RAMAN SPECTROSCOPY OF ELECTROMIGRATION-INDUCED OXYGEN VACANCY AGGREGATION IN YBA2CU3O7-DELTA, Applied physics letters, 64(11), 1994, pp. 1427-1429
We describe the results of micro-Raman spectroscopy and optical micros
copy studies of basal-plane chain-oxygen vacancy motion in YBa2Cu3O7-d
elta thin films under the influence of a high current bias near 300 K.
Above a threshold level this bias causes vacancy aggregation and then
long-range displacement, leading to an enhancement of oxygen order in
the region of highest current density and.the complex accumulation of
oxygen vacancies in the region where the electromigration force is ne
ar the threshold level.