MICRO-RAMAN SPECTROSCOPY OF ELECTROMIGRATION-INDUCED OXYGEN VACANCY AGGREGATION IN YBA2CU3O7-DELTA

Authors
MOECKLY BH BUHRMAN RA SULEWSKI PE
Citation
Bh. Moeckly et al., MICRO-RAMAN SPECTROSCOPY OF ELECTROMIGRATION-INDUCED OXYGEN VACANCY AGGREGATION IN YBA2CU3O7-DELTA, Applied physics letters, 64(11), 1994, pp. 1427-1429
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
11
Year of publication
1994
Pages
1427 - 1429
Database
ISI
SICI code
0003-6951(1994)64:11<1427:MSOEOV>2.0.ZU;2-Y
Abstract
We describe the results of micro-Raman spectroscopy and optical micros copy studies of basal-plane chain-oxygen vacancy motion in YBa2Cu3O7-d elta thin films under the influence of a high current bias near 300 K. Above a threshold level this bias causes vacancy aggregation and then long-range displacement, leading to an enhancement of oxygen order in the region of highest current density and.the complex accumulation of oxygen vacancies in the region where the electromigration force is ne ar the threshold level.