CRITICAL ISSUES CONCERNING THE MECHANISMS OF DUPLEX GRAIN-STRUCTURE FORMATION AND INTERPRETATION OF DUPLEX NIO GROWN ON PURE NI AND CR DOPED SUBSTRATES DURING HIGH-TEMPERATURE OXIDATION

Authors
Citation
Ck. Kim et Lw. Hobbs, CRITICAL ISSUES CONCERNING THE MECHANISMS OF DUPLEX GRAIN-STRUCTURE FORMATION AND INTERPRETATION OF DUPLEX NIO GROWN ON PURE NI AND CR DOPED SUBSTRATES DURING HIGH-TEMPERATURE OXIDATION, Journal of materials engineering and performance, 5(6), 1996, pp. 699-709
Citations number
52
Categorie Soggetti
Material Science
ISSN journal
10599495
Volume
5
Issue
6
Year of publication
1996
Pages
699 - 709
Database
ISI
SICI code
1059-9495(1996)5:6<699:CICTMO>2.0.ZU;2-8
Abstract
Duplex layers are a very important class of film microstructures and f orm under a wide variety of conditions on a large number of substrates . In this paper, the available models for duplex layer formation are r eviewed in detail and the basic assumptions which are based upon them are examined. The mechanisms of formation of the duplex layers based o n microstructural observations in pure Ni and Ni-lat. % Cr systems dur ing high-temperature oxidation are addressed.