STUDY OF SPUTTERING MECHANISM OF SILICON WITH HYDROGEN PLASMA CONTROLLED BY MAGNETIC-FIELD

The sputtering mechanism of silicon in rf hydrogen plasma has been stu died by controlling plasma density at silicon surface. The amounts of ionic and neutral species have been measured as functions of the magne tic field. We have observed that the amount of each neutral species sh ows a different dependence on the magnetic field. It is found that the silicon target is sputtered by mainly forming neutral SiH2 and SiH3 s pecies into plasma. The amount of ionic species changes linearly with increase in the magnetic field. There is no direct relationship betwee n the amount of ionic species and the corresponding neutral species.