CATHODOLUMINESCENCE AND ELECTRON-BEAM IRRADIATION EFFECT OF POROUS SILICON STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY

Authors
MITSUI T YAMAMOTO N TAKEMOTO K NITTONO O
Citation
T. Mitsui et al., CATHODOLUMINESCENCE AND ELECTRON-BEAM IRRADIATION EFFECT OF POROUS SILICON STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY, JPN J A P 2, 33(3A), 1994, pp. 120000342-120000344
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
3A
Year of publication
1994
Pages
120000342 - 120000344
Database
ISI
SICI code
Abstract
Cathodoluminescence (CL) from n-type porous silicon was studied using the CL detection system combined with a transmission electron microsco pe. Two luminescence bands were observed with peaks at 420 nm and 660 nm. The 660 nm band peak decays more quickly with increasing accelerat ing voltage and decreasing temperature. The intensity profile along th e cross-sectional trace shows that the 660 nm luminescence centers are mainly located near the top side of the porous layer. The 420 nm CL b and was found at accelerating voltage higher than 160 kV at 20 K.