ENHANCEMENT OF NITROGEN INCORPORATION IN ZNSE GROWN ON MISORIENTED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

Nitrogen incorporation and electrical activity have been investigated for ZnSe grown on GaAs substrates (100) oriented and misoriented 15-de grees toward the [011] direction, by molecular beam epitaxy. It was fo und that nitrogen incorporation in the 15-degrees misoriented case was enhanced by a factor of two compared with that on the (100) oriented substrate. Electrical activity was unity for nitrogen concentration Up to 1 X 10(18) cm-3, then was falling for both substrates. This result indicates that electrical activity is determined only by nitrogen con centration in the layer and is not affected by the substrate orientati on.