REACTIVE ION-BEAM ETCHING OF INDIUM-PHOSPHIDE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA USING METHANE HYDROGEN NITROGEN MIXTURES

Reactive ion beam etching of indium phosphide in electron cyclotron re sonance plasma using methane/hydrogen/nitrogen mixtures has been perfo rmed. This etch chemistry provides a clean process with no polymer dep osition. With etching at an ion acceleration voltage of 300 V, mirrorl ike etched surfaces are obtained with donor passivation of about 10%. The electrical damage zone is restricted to a depth of 20 nm. Chemical etching limited by sputter-induced desorption of etch products of low volatility is proposed as the etch mechanism.