A 4-CHANNEL, LOW-POWER CMOS CHARGE PREAMPLIFIER FOR SILICON DETECTORSWITH MEDIUM VALUE OF CAPACITANCE

Authors
RANDAZZO N RUSSO GV LOPRESTI D PANEBIANCO S PETTA C REITO S
Citation
N. Randazzo et al., A 4-CHANNEL, LOW-POWER CMOS CHARGE PREAMPLIFIER FOR SILICON DETECTORSWITH MEDIUM VALUE OF CAPACITANCE, IEEE transactions on nuclear science, 44(1), 1997, pp. 31-35
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
44
Issue
1
Year of publication
1997
Pages
31 - 35
Database
ISI
SICI code
0018-9499(1997)44:1<31:A4LCCP>2.0.ZU;2-D
Abstract
We present a low-power CMOS charge preamplifier, suitable for use with silicon detectors having a medium value of capacitance, Noise conside rations and a long decay time of the output signal command the use of unusually large devices such as an input transistor having W = 10 000 mu m and a 7-M Omega feedback resistor. Both of these devices were int egrated inside the chip, We present and compare theoretical prediction s together with the results of post-layout simulation and the measurem ents obtained.