PREPARATION OF GAN SINGLE-CRYSTALS USING A NA FLUX

Authors
YAMANE H SHIMADA M CLARKE SJ DISALVO FJ
Citation
H. Yamane et al., PREPARATION OF GAN SINGLE-CRYSTALS USING A NA FLUX, Chemistry of materials, 9(2), 1997, pp. 413
Citations number
20
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Chemistry of materials → ACNP
ISSN journal
08974756
Volume
9
Issue
2
Year of publication
1997
Database
ISI
SICI code
0897-4756(1997)9:2<413:POGSUA>2.0.ZU;2-N
Abstract
GaN single. crystals were prepared in a sealed stainless steel tube at 600-800 degrees C from Ga using a Na flux and N-2 from the thermal de composition of sodium azide, NaN3. The maximum size of the crystals ob tained was 2 mm. Oxygen and other impurity elements were not detected in the crystals by AES and EDX. When scaled up, this method may provid e large GaN crystals for use as substrates for nitride based lasers.