MONTE-CARLO MODELING OF HOT-ELECTRON RELAXATION IN THE BASE REGION OFALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
KHRENOV G RYZHII V KARTASHOV S
Citation
G. Khrenov et al., MONTE-CARLO MODELING OF HOT-ELECTRON RELAXATION IN THE BASE REGION OFALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Semiconductor science and technology, 9(3), 1994, pp. 329-332
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
3
Year of publication
1994
Pages
329 - 332
Database
ISI
SICI code
0268-1242(1994)9:3<329:MMOHRI>2.0.ZU;2-1
Abstract
An ensemble Monte Carlo particle simulation of AlInAs/Ga4InAs heteroju nction bipolar transistors was carried out to investigate the influenc e of the hot-electron transport regime in the base on the steady-state and high-frequency characteristics of the device. It was found that t he electron transport in the base is ballistic or near-ballistic for b ase thickness W(B) < 0.06 mum and is diffusive for W(B) > 0.2 mum.