Te. Tsai et al., STRUCTURAL ORIGIN OF THE 5.16-EV OPTICAL-ABSORPTION BAND IN SILICA AND GE-DOPED SILICA, Applied physics letters, 64(12), 1994, pp. 1481-1483
The origin of the 5.16 eV absorption band observed in silica and Ge-do
ped silica was studied using optical and electron spin resonance (ESR)
measurements. The band was observed only in samples containing Ge, su
ggesting that it is related to the Ge impurity in silica, while a lack
of correlation between the ESR intensity of the induced hydrogen-asso
ciated doublet and the absorption coefficient of the 5.16 eV band indi
cates that it is not related to two-coordinated Si or Ge. The observat
ion of the absorption coefficient increased as the square root of the
Ge concentration demonstrates that the 5.16 eV band is not related to
two-coordinated Ge defects but that it is an oxygen deficiency center
of the divacancy type associated with Ge.