ENERGY-TRANSFER FROM RADIO-FREQUENCY SHEATH ACCELERATED CF(3)(+) AND AR(+) IONS TO A SI WAFER

The thermal energy flux which a rf plasma delivers to a silicon surfac e has been studied by a calorimetric method. The energy flux appears t o be proportional to the product of the average ion energy and the ion flux, which was calculated from the Bohm criterion using measured pla sma parameters. Furthermore, the value and energy dependence of the ki netic energy transfer efficiency (about 0.5) suggests that the microsc opic interaction of impinging ions in the eV range with a silicon surf ace can be described by a binary collision model.