CONDUCTION-BAND STATES OF THIN INAS ALSB QUANTUM-WELLS/

Authors
BOYKIN TB
Citation
Tb. Boykin, CONDUCTION-BAND STATES OF THIN INAS ALSB QUANTUM-WELLS/, Applied physics letters, 64(12), 1994, pp. 1529-1531
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
12
Year of publication
1994
Pages
1529 - 1531
Database
ISI
SICI code
0003-6951(1994)64:12<1529:CSOTIA>2.0.ZU;2-P
Abstract
We study the conduction-band states of thin InAs quantum wells confine d by relatively thick AlSb barriers with a ten-band tight-binding mode l, considering the results in the context of recent experiments. For t he 1 monolayer well structure, we find that the wave function has sign ificant evanescent-state contributions both in the well and barriers, while we find that the wave function of the 5 monolayer device is most ly GAMMA-like throughout.