UNIAXIAL-STRESS DEPENDENCE OF EXCITON EMISSION FROM SEEDED PHYSICAL VAPOR TRANSPORT ZNSE

Uniaxial stress dependence of photoluminescence has been employed to s tudy the exciton emission in seeded physical vapor transport ZnSe. By examining the stress behavior of the photoluminescence line I(x) , it is suggested that this line is due to recombination of a deep donor-bo und exciton. From measurements of the pi- and sigma-polarized luminesc ence spectra the heavy-hole and light-hole components of the exciton e missions were followed as a function of applied stress. From these dat a the linear hydrostatic and shear deformation potential constants wer e calculated to be a = -5.1 and b = -0.74 eV, respectively.