STRONG ACCUMULATION OF AS PRECIPITATES IN LOW-TEMPERATURE INGAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY

Low temperature InGaAs strained quantum wells have been grown by molec ular beam epitaxy and annealed at 600-900-degrees-C for 10 min. For an optimized annealing condition, arsenic precipitates can be successful ly confined in the InGaAs wells and completely depleted in the GaAs ba rriers. The strong accumulation of As precipitates shows that the phen omena are not due to the strain effect but may be explained by the dif ference of interfacial energy between precipitate and matrix. The abil ity to control the As precipitates into two-dimensional quantum wells in LT materials has unique applications in a wide variety of devices.