EFFECTS OF DOPANTS IN PZT FILMS

Undoped and lanthanide (La and Nd) doped Pb(ZrxTi1-x)03, i.e., PZT, fe rroelectric thin films were prepared by metallorganic decomposition (M OD) and spin-coating. The precursors for making the undoped PZT films were derived from lead acetate, zirconium n-propoxide, and titanium is opropoxide. In addition, lanthanum acetylacetonate and neodymium aceta te were introduced into the precursor solution to accomplish the dopin g of the corresponding elements. Both undoped and doped PZT films were coated onto Pt/Ti/SiO2/Si and single-crystal sapphire substrates to v arious thicknesses and annealed at a range of temperatures and times. The effects of lanthanide dopants in PZT films were studied with regar d to microstructure, Curie temperatures, crystal distortion, optical p roperties, and electrical properties. The results indicate that the ad dition of La and Nd dopants tends to enhance perovskite phase formatio n and improve the packing densities and electrical properties of PZT f ilms.