EXPERIMENTAL HIGH-PERFORMANCE SUB-0.1-MU-M CHANNEL NMOSFETS

Very high performance sub-0.1mum channel nMOSFET's are fabricated with 35 angstrom gate oxide and shallow source-drain extensions. An 8.8-ps /stage delay at V(dd) = 1.5 V is recorded from a 0.08mum channel nMOS ring oscillator at 85 K. The room temperature delay is 11.3 ps/stage. These are the fastest switching speeds reported to date for any silico n devices at these temperatures. Cutoff frequencies (f(T)) of a 0.08-m um channel device are 93 GHz at 300 K, and 119 GHz at 85 K, respective ly. Record saturation transconductances, 740 mS/mm at 300 K and 1040 m S/mm at 85 K, are obtained from a 0.05-mum channel device. Good subthr eshold characteristics are achieved for 0.09 mum channel devices with a source-drain halo process.