LOW-THRESHOLD AND HIGH UNIFORMITY FOR NOVEL 1.3-MU-M-STRAINED INGAASPMQW DC-PBH LDS FABRICATED BY THE ALL-SELECTIVE MOVPE TECHNIQUE

1.3-mu m-strained InGaAsP multiquantum-well (MQW) double-channel plana r buried heterostructure laser diodes (DC-PBH-LD's) were fabricated by all-selective metalorganic vapor phase epitaxy (MOVPE). In the fabric ation process, the strained MQW active layer and current-blocking stru ctures were directly formed by selective:MOVPE without a semiconductor etching process. A low-threshold current (I-th = 2.6 mA @ 25 degrees C for 200-mu m-long 70%-90% facets) and excellent high-temperature ope ration (T-o = 84 K, 25 degrees C-60 degrees C and T-o = 70 K, 25 degre es C-85 degrees C were achieved. Furthermore, extremely uniform thresh old current and slope efficiency were observed. The median time to fai lure for these LD's was estimated to be more than 100 000 h under the 85 degrees C-5 mW aging condition.