Finite-element thermal modeling shows that thermoelectric cooled opera
tion of IV-VI semiconductor diode lasers is possible by replacing the
thermally resistive lead-salt substrate with copper. Contrasting therm
al models reveal a 63 K decrease in active region temperature under no
rmal operating conditions when PbTe is replaced with copper. This impr
oved device structure can be obtained by using epitaxial-lift-off tech
niques similar to those developed for III-V semiconductor devices.