PHOTOCURRENTS IN PHOTOCONDUCTIVE SEMICONDUCTORS GENERATED BY A MOVINGSPACE-CHARGE FIELD

Authors
DAVIDSON FM WANG CC FIELD CT TRIVEDI S
Citation
Fm. Davidson et al., PHOTOCURRENTS IN PHOTOCONDUCTIVE SEMICONDUCTORS GENERATED BY A MOVINGSPACE-CHARGE FIELD, Optics letters, 19(7), 1994, pp. 478-480
Citations number
9
Categorie Soggetti
Optics
Journal title
Optics letters → ACNP
ISSN journal
01469592
Volume
19
Issue
7
Year of publication
1994
Pages
478 - 480
Database
ISI
SICI code
0146-9592(1994)19:7<478:PIPSGB>2.0.ZU;2-B
Abstract
The behavior of photocurrents generated in the semiconductors InP:Fe, GaAs:Cr, and undoped GaAs in optical two-wave mixing experiments as a function of the frequency difference between the two waves is characte rized and verified experimentally. The sign, the concentration, and th e ratio gamma(R)/mu of the dominant charge carriers and the effective concentration of trapping centers can be found from this dependence.