CAPACITIVELY COUPLED SI STRIP DETECTORS ON A 100 MM WAFER

Authors
YEH SC SU S LU JP
Citation
Sc. Yeh et al., CAPACITIVELY COUPLED SI STRIP DETECTORS ON A 100 MM WAFER, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 342(1), 1994, pp. 49-51
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
342
Issue
1
Year of publication
1994
Pages
49 - 51
Database
ISI
SICI code
0168-9002(1994)342:1<49:CCSSDO>2.0.ZU;2-W
Abstract
Silicon strip detectors with single-sided readout were designed and pr ocessed on 100 mm silicon wafers. Detectors with integrated coupling c apacitors and polysilicon bias resistors were tested by electrical mea surements. A 200 nm gate oxide thickness was chosen to provide a coupl ing capacitance of 9.75 pF/cm. A full depletion voltage of 80 V and le akage currents of 0.29, 0.64, 0.97, and 1.01 nA/strip for strip length s of 2, 5, 7, and 8 cm, respectively were measured.