CAPACITANCES IN SILICON MICROSTRIP DETECTORS

Authors
BARBERIS E CARTIGLIA N LEVIER C RAHN J RINALDI P SADROZINSKI HFW WICHMANN R OHSUGI T UNNO Y MIYATA H TAMURA N YAMAMOTO K
Citation
E. Barberis et al., CAPACITANCES IN SILICON MICROSTRIP DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 342(1), 1994, pp. 90-95
Citations number
16
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
342
Issue
1
Year of publication
1994
Pages
90 - 95
Database
ISI
SICI code
0168-9002(1994)342:1<90:CISMD>2.0.ZU;2-D
Abstract
We present an analysis of the capacitances which are important for the operation of double-sided, AC-coupled silicon microstrip detectors. F rom frequency dependent measurements we extract interstrip, body and c oupling capacitances of the strips, using SPICE simulations. Using ele ctrostatic simulations we calculate the geometry dependence of interst rip and body capacitances and of depletion voltages. We evaluate the r adiation hardness and the noise contribution of different strip geomet ries.