RADIATION EFFECTS OF DOUBLE-SIDED SILICON STRIP SENSORS

Authors
TAMURA N HATAKENAKA T IWATA Y KUBOTA M OHSUGI T OKADA M UNNO Y ASO T ISHIZUKA M MIYATA H ANDO A HATANAKA K MIZUNO Y GOTO M KOBAYASHI S MURAKAMI A INOUE K SUZUKI Y DAIGO M YAMAMOTO K YAMAMURA K
Citation
N. Tamura et al., RADIATION EFFECTS OF DOUBLE-SIDED SILICON STRIP SENSORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 342(1), 1994, pp. 131-136
Citations number
11
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
342
Issue
1
Year of publication
1994
Pages
131 - 136
Database
ISI
SICI code
0168-9002(1994)342:1<131:REODSS>2.0.ZU;2-5
Abstract
A series of proton-beam irradiations was performed in order to investi gate the radiation damage of silicon photodiodes and double-sided sili con strip sensors. Measurements were made for the leakage current, bia s resistance, interstrip isolation, annealing and responses to an infr ared light pulse and beta-rays. Some problems in the production of rad iation-hard double-sided strip sensors were observed. However, it has been shown that most of them can be resolved by adequately designing t he strip structure, the implantation density and the materials used fo r various parts of the sensor. It is therefore possible to obtain a do uble-sided silicon strip sensor which works even after charged-particl e irradiation of 20 kGy.