STUDIES OF DOUBLE-SIDED, DOUBLE METAL-SILICON STRIP DETECTORS

Citation
Jp. Alexander et al., STUDIES OF DOUBLE-SIDED, DOUBLE METAL-SILICON STRIP DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 342(1), 1994, pp. 282-286
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
342
Issue
1
Year of publication
1994
Pages
282 - 286
Database
ISI
SICI code
0168-9002(1994)342:1<282:SODDMS>2.0.ZU;2-B
Abstract
We have studied double-sided, double-metal silicon microstrip detector s for the CLEO-II vertex detector. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors ar e manufactured by Hamamatsu Photonics. They are full size AC coupled d etectors with polysilicon bias resistors on the n-side and punchthroug h biasing on the p-side. We present measurements of detector static pr operties, including the extra capacitance due to the double layer stru cture, as well as measurements of signal and noise.