Epitaxial Nb and Nb/Ti/Nb films on sapphire substrates were prepared b
y e-beam evaporation and sealed with thin Pd or Au layers to avoid oxi
dation. Hydrogen charging was performed from the gas phase and the con
centration in the films was measured by the N-15 nuclear reaction meth
od. For the single Nb layer the hydrogen concentration in the film as
a function of the external hydrogen pressure (solubility) was investig
ated. For the Nb/Ti/Nb sandwich samples the distribution of hydrogen a
mong the different layers was studied. In both cases deviations from t
he bulk behavior were observed. They are attributed to restrictions in
the lateral expansion of epitaxial films. In addition interface effec
ts were studied.