PHOTOVOLTAIC EFFECT OF A METAL POROUS SILICON SILICON STRUCTURE

Authors
HAN ZF SHI JY TAO H GONG L FU SJ SHI CS ZHANG XY
Citation
Zf. Han et al., PHOTOVOLTAIC EFFECT OF A METAL POROUS SILICON SILICON STRUCTURE, Physics letters. A, 186(3), 1994, pp. 265-268
Citations number
10
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
186
Issue
3
Year of publication
1994
Pages
265 - 268
Database
ISI
SICI code
0375-9601(1994)186:3<265:PEOAMP>2.0.ZU;2-L
Abstract
This Letter shows that MPS diodes are serially connected by a M/PS Sch ottky junction and a PS/P-Si heterojunction with a different photosens itivity. The Fermi level increases to nearly the center of the band ga p during the conversion from P-Si to PS. The band gap diagram of a MPS diode is also presented.