METAL-SEMICONDUCTOR-METAL PHOTODIODE STRUCTURES WITH A LOW DARK CURRENT-DENSITY

The use of epitaxial GaAs:Bi films doped with isovalent impurities ens ured much better electrical characteristics of fast-response photodiod e structures of the metal-semiconductor-metal type made from these fil ms. In particular, the density of the dark current was lower, the coef ficient representing the deviation of the current-voltage characterist ics from the ''ideal'' behavior was smaller, and the avalanche breakdo wn voltage was higher. The use of such structures in various optoelect ronic devices can improve their noise characteristics.